EE Faculty Colloquium by Prof. Kaushik Basu
EE, MMCRVenue: MMCR, EE Time: 4pm, 20 January 2023 Abstract:Silicon Carbide MOSFETs (SiC MOSFETs) fall into wide band gap (WBG) power devices. These devices are commercially available in the voltage range of 600-3300V and compete with the state-of-the-art Si-insulated gate bipolar junction transistors (IGBTs). Superior material properties of SiC MOSFET lead to smaller die sizes. This […]